Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: Medium high voltage MOS transistorDescription: GENESIC SEMICONDUCTOR GA50JT12-247 Silicon carbide crystal tube, 1.2KV, 50A, TO-247AB16421+$830.003210+$800.880350+$797.2399100+$793.5996150+$787.7750250+$782.6785500+$777.58201000+$771.7574 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FCH47N60_F133 Power Field Effect Transistor, MOSFET, N-channel, 47 A, 600 V, 0.058 ohm, 10 V, 3 V94061+$87.878410+$84.0576100+$83.3699250+$82.8349500+$81.99441000+$81.61232500+$81.07745000+$80.6189 -
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Category: Medium high voltage MOS transistorDescription: STMICROELECTRONICS STW18N60DM2 Power MOSFET, Mdmesh DM2, N Channel, 12 A, 600 V, 0.26 ohm, 10 V, 3 V new949410+$9.2436100+$8.7814500+$8.47331000+$8.45792000+$8.39635000+$8.31927500+$8.257610000+$8.2268 -
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Category: Medium high voltage MOS transistorDescription: ROHM R6030ENZ1C9 Power Field Effect Transistor, MOSFET, N-channel, 30 A, 600 V, 0.115 ohm, 10 V, 4 V New121920+$0.206650+$0.1913100+$0.1836300+$0.1775500+$0.17291000+$0.16985000+$0.166810000+$0.1637 -
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Category: Medium high voltage MOS transistorDescription: ROHM R6024KNZ1C9 Power Field Effect Transistor, MOSFET, N-channel, 24 A, 600 V, 0.15 ohm, 10 V, 5 V New2086 -
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Category: Medium high voltage MOS transistorDescription: INFINEON SPW17N80C3FKSA1 功率场效应管, MOSFET, N沟道, 17 A, 800 V, 290 mohm, 10 V, 3 V9525 -
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Category: Medium high voltage MOS transistorDescription: STMICROELECTRONICS STW48N60DM2 Power MOSFET, Mdmesh DM2, N Channel, 40 A, 600 V, 0.065 ohm, 10 V, 4 V 新6187 -
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Category: Medium high voltage MOS transistorDescription: N 通道 MDmesh DM2 系列，STMicroelectronics MDmesh DM2 MOSFET 提供低 RDS(on) 和改进的二极管反向恢复时间，可提高效率，此系列经优化可用于全桥相移 ZVS 拓扑。 高 dV/dt 能力，可提高系统可靠性 符合 AEC-Q101 ### MOSFET 晶体管，STMicroelectronics1596 -
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Category: Medium high voltage MOS transistorDescription: INFINEON IPW90R1K0C3FKSA1 功率场效应管, MOSFET, N沟道, 5.7 A, 900 V, 1 ohm, 10 V, 3 V6903 -
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Category: Medium high voltage MOS transistorDescription: WOLFSPEED C2M0045170D 功率场效应管, MOSFET, N沟道, 72 A, 1.7 kV, 0.045 ohm, 20 V, 2.6 V 新3489 -
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Category: Medium high voltage MOS transistorDescription: SupreMOS® MOSFET，Fairchild Semiconductor Fairchild 推出了新一代 600V 超级结 MOSFET - SupreMOS®。 与 Fairchild 的 600V SuperFET™ MOSFET 相比，其低 RDS（接通）和总栅极电荷让品质因素 (FOM) 降低了 40%。 此外，SupreMOS 系列为相同的 RDS（接通）提供低栅极电荷，提供极佳的切换性能，切换和传导损耗降低 20%，从而获得更高的效率。 这些特征让电源符合用于台式 PC 的 ENERGY STAR® 80 PLUS 黄金分类和用于服务器的白金分类。 ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。5179 -
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Category: Medium high voltage MOS transistorDescription: STMICROELECTRONICS STW56N60DM2 Power MOSFET, Mdmesh DM2, N Channel, 50 A, 600 V, 0.052 ohm, 10 V, 4 V 新6263 -
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Category: Medium high voltage MOS transistorDescription: VISHAY SIHG47N60EF-GE3 Field Effect Transistor, MOSFET, N-channel, 600V, 47A, TO247AC-36917
